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Typical Characteristics T J = 25°C unless otherwise noted
40
3.0
35
30
25
V GS = 10V
V GS = 9V
V GS = 8V
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5%MAX
2.5
2.0
V GS = 6V
V GS = 7V
V GS = 8V
20
15
V GS = 7V
1.5
V GS = 9V
10
5
0
V GS = 6V
1.0
0.5
V GS = 10V
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5%MAX
0
1
2
3
4
5
0
5
10 15 20 25
30
35
40
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
2.0
I D , DRAIN CURRENT(A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
150
1.8
1.6
1.4
1.2
I D = 6A
V GS = 10V
120
90
60
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5%MAX
I D = 6A
T J = 125 o C
1.0
0.8
30
T J = 25 o C
0.6
-75
-50
-25 0 25 50 75 100 125 150
0
5
6
7
8
9
10
T J , JUNCTION TEMPERATURE ( o C )
Figure 3. Normalized On- Resistance
vs Junction Temperature
40
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
40
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5%MAX
10
V GS = 0V
30
V DS = 7V
1
T J = 150 o C
T J = 25 o C
20
T J = 150 o C
0.1
10
T J = 25 o C
T J = -55 o C
0.01
T J = -55 o C
0
2
4
6
8
10
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
?2008 Fairchild Semiconductor Corporation
FDB3502 Rev.C2
3
www.fairchildsemi.com
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